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SST29EE010A-250-4C-PH中文资料
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元器件交易网www.cecb2b.com
1Megabit(128Kx8PageModeEEPROM
SST29EE010A/SST29LE010A/SST29VE010A
DataSheet
FEATURES:
•SingleVoltageReadandWriteOperations–5.0V-onlyfortheSST29EE010A–3.0-3.6VfortheSST29LE010A–2.7-3.6VfortheSST29VE010A•SuperiorReliability
–Endurance:100,000Cycles(typical–Greaterthan100yearsDataRetention•LowPowerConsumption
–ActiveCurrent:20mA(typicalfor5Vand10mA(typicalfor3.0/2.7V
–StandbyCurrent:10µA(typical•FastPageWriteOperation
–128BytesperPage,1024Pages–PageWriteCycle:5ms(typical
–CompleteMemoryRewrite:5sec(typical–EffectiveByteWriteCycleTime:39µs(typical
•FastReadAccessTime
–5.0V-onlyoperation:90and120ns–3.0-3.6Voperation:150and200ns–2.7-3.6Voperation:200and250ns•LatchedAddressandData
•AutomaticWriteTiming–InternalVPPGeneration•EndofWriteDetection–ToggleBit–Data#Polling
•HardwareandSoftwareDataProtection•TTLI/OCompatibility
•JEDECStandard
–FlashEEPROMPinoutsandcommandsets•PackagesAvailable–32PinPDIP–32-PinPLCC
–32-PinTSOP(8mmx20mm&8mmx14mmupdatingofprogram,configuration,ordatamemory.Forallsystemapplications,theSST29EE010A/29LE010A/29VE010Asignificantlyimproveperformanceandreli-ability,whileloweringpowerconsumption.TheSST29EE010A/29LE010A/29VE010Aimproveflexibil-itywhileloweringthecostforprogram,data,andconfigu-rationstorageapplications.
Tomeethighdensity,surfacemountrequirements,theSST29EE010A/29LE010A/29VE010Aareofferedin32-pinTSOPand32-leadPLCCpackages.A600-mil,32-pinPDIPpackageisalsoavailable.SeeFigures1and2forpinouts.
DeviceOperation
TheSSTpagemodeEEPROMoffersin-circuitelectricalwritecapability.TheSST29EE010A/29LE010A/29VE010AdoesnotrequireseparateEraseandProgramoperations.Theinternallytimedwritecycleexecutesbotheraseandprogramtransparentlytotheuser.TheSST29EE010A/29LE010A/29VE010AhaveindustrystandardSoftwareDataProtection.TheSST29EE010A/29LE010A/29VE010AarecompatiblewithindustrystandardEEPROMpinoutsandfunctionality.
Read
TheReadoperationsoftheSST29EE010A/29LE010A/29VE010AarecontrolledbyCE#andOE#,bothhavetobelowforthesystemtoobtaindatafromtheoutputs.
12345678910111213141516
PRODUCTDESCRIPTION
TheSST29EE010A/29LE010A/29VE010Aare128Kx8CMOSPageWriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtech-nology.Thesplit-gatecelldesignandthickoxidetunnel-inginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateapproaches.TheSST29EE010A/29LE010A/29VE010Awritewithasinglepowersupply.InternalErase/Programistranspar-enttotheuser.TheSST29EE010A/29LE010A/29VE010AconformtoJEDECstandardpinoutsforbyte-widememories.
Featuringhighperformancepagewrite,theSST29EE010A/29LE010A/29VE010Aprovideatypicalbyte-writetimeof39µsec.Theentirememory,i.e.,128KBytes,canbewrittenpage-by-pageinaslittleas5seconds,whenusinginterfacefeaturessuchasToggleBitorData#Pollingtoindicatethecompletionofawritecycle.Toprotectagainstinadvertentwrite,theSST29EE010A/29LE010A/29VE010Ahaveon-chiphardwareandsoftwaredataprotectionschemes.De-signed,manufactured,andtestedforawidespectrumofapplications,theSST29EE010A/29LE010A/29VE010Aareofferedwithaguaranteedpagewriteenduranceof104cycles.Dataretentionisratedatgreaterthan100years.
TheSST29EE010A/29LE010A/29VE010Aaresuitedforapplicationsthatrequireconvenientandeconomical
©1999SiliconStorageTechnology,Inc.TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.Thesespecificationsaresubjecttochangewithoutnotice.303-012/991
元器件交易网www.cecb2b.com
1MegabitPageModeEEPROM
SST29EE010A/SST29LE010A/SST29VE010A
CE#isusedfordeviceselection.WhenCE#ishigh,thechipisdeselectedandonlystandbypowerisconsumed.OE#istheoutputcontrolandisusedtogatedatafromtheoutputpins.ThedatabusisinhighimpedancestatewheneitherCE#orOE#ishigh.Refertothereadcycletimingdiagramforfurtherdetails(Figure3.
Write
ThePageWritetotheSST29EE010A/29LE010A/29VE010AusestheJEDECStandardSoftwareDataProtection(SDPthree-bytecommandsequence.TheWriteoperationconsistsofthreesteps.Step1isthethree-byteloadsequenceforSoftwareDataProtection.Step2isthebyte-loadcycletoapagebufferoftheSST29EE010A/29LE010A/29VE010A.Steps1and2usethesametimingforbothoperations.Step3isaninternallycontrolledwritecycleforwritingthedataloadedinthepagebufferintothememoryarrayfornonvolatilestorage.DuringboththeSDPthree-byteloadsequenceandthebyte-loadcycle,theaddressesarelatchedbythefallingedgeofeitherCE#orWE#,whicheveroccurslast.ThedataislatchedbytherisingedgeofeitherCE#orWE#,whicheveroccursfirst.TheinternalwritecycleisinitiatedbytheTBLCOtimeraftertherisingedgeofWE#orCE#,whicheveroccursfirst.Thewritecycle,onceinitiated,willcontinuetocompletion,typicallywithin5ms.SeeFigures4and5forWE#andCE#controlledpagewritecycletimingdiagramsandFigures13and15forflowcharts.
TheWriteoperationhasthreefunctionalcycles:theSoftwareDataProtectionloadsequence,thepageloadcycle,andtheinternalwritecycle.TheSoftwareDataProtectionconsistsofaspecificthree-byteloadse-quencethatallowswritingtotheselectedpageandwillleavetheSST29EE010A/29LE010A/29VE010Apro-tectedattheendofthePageWrite.Thepageloadcycleconsistsofloading1to128bytesofdataintothepagebuffer.TheinternalwritecycleconsistsoftheTBLCOtime-outandthewritetimeroperation.DuringtheWriteoperation,theonlyvalidreadsareData#PollingandToggleBit.
ThePageWriteoperationallowstheloadingofupto128bytesofdataintothepagebufferoftheSST29EE010A/29LE010A/29VE010Abeforetheinitiationoftheinternalwritecycle.Duringtheinternalwritecycle,allthedatainthepagebufferiswrittensimultaneouslyintothememory
array.Hence,thepagewritefeatureofSST29EE010A/29LE010A/29VE010Aallowtheentirememorytobewritteninaslittleas5seconds.Duringtheinternalwritecycle,thehostisfreetoperformadditionaltasks,suchastofetchdatafromotherlocationsinthesystemtosetupthewritetothenextpage.IneachPageWriteoperation,allthebytesthatareloadedintothepagebuffermusthavethesamepageaddress,i.e.A7throughA